In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is measured and compared for four GaAs/AlGaAs Hall effect sensor designs where the Ohmic contact length (contact geometry) is varied across the four devices. By varying the geometry, the trade-off in sensitivity and frequency limit is explored and the underlying caus...